Menu

Optical Sensors

Photo Multiplier Tube (PMT) NIR Photomultiplier Tube NIR MCP with Cooler NIR MCP-PMT Micro-channel Plates
Bench-top Type High Voltage Power Supply for PMT Si Photodiodes Avalanche Photo-diodes
Photo Multiplier Tube (PMT)

 

photonicsnew

For Scintillation Counting, Fast Time Response Bialkali Photocathode, 8-stage, Head-on Type
Features:

    • Fast Time Response
    • Excellent Time Response
    • Suitable for Mass Production

Specifications:

Spectral Response Maximum Rating
Range (nm) Peak Wavelength Photo cathode material Window Material Supply Voltage Between Anode & Cathode Average Anode Current
300 to 650 420 nm Bialkali Borosilicate glass 1750 V 0.1 mA
300 to 650 420 nm Bialkali Borosilicate glass 1750 V 0.1 mA
300 to 650 420 nm Bialkali Borosilicate glass 1750 V 0.1 mA
Cathode Characteristics
Dynode Structure/Stage Anode to Cathode
Supply Voltage		 Luminous Blue Sensitivity
Index (CS 5-58)Typ.		 Radiant
Typ.
Min. Typ.
Linear-focused/8 1500 V 70 µA/lm 95 µA/lm 10.0 80 mA/W
Linear-focused/8 1500 V 70 µA/lm 95 µA/lm 10.0 80 mA/W
Linear-focused/8 1500 V 70 µA/lm 95 µA/lm 10.0 88 mA/W

 

Anode Characteristics
Luminous Typ. Radiant Typ. Gain Typ. Dark Current(After 30 min.) Time Response
Rise
Time Typ.		 Transit
Time Typ.		 Transit
Time Spread
Typ. Max.
48 A/lm 4.0 x 10 4 A/W 5.0 x 10 5 3 nA 30 nA 0.9 ns 10 ns 170 ps
48 A/lm 4.0 x 10 4 A/W 5.0 x 10 5 3 nA 30 nA 1.2 ns 13 ns 190 ps
30 A/lm 2.8 x 10 4 A/W 3.2 x 10 5 10 nA 50 nA 2.0 ns 20 ns 270 ps

line

NIR (Near infrared) Photomultiplier Tube:
photonicsnew2

Features:

  • Flat response from visible to near IR minimizes spectral sensitivity correction.
  • Photoluminescence from a room temperature sample can be measured.
  • Time resolved measurement in near IR is realized.

Specifications:

General:

Spectral Response 300 to 1400 nm 300 to 1700 nm
Photocathode Material InP / InGaAsP InP / InGaAs
Minimum Effective Area 3 x 8 mm
Window Material Borosilicate glass
Dynode Secondary Emitting Surface Cu-BeO
Structure Line focused
Number of Stage 10
Socket C9940-01, -02
Operating Temperature -90 to -70 0C
Recommended Operating Temperature -80 0C
Storage Temperature -90 to +50 0C

Characteristics (at -80 0C, Supply voltage: -1500 V)

Min. Typ. Max. Min. Typ. Max.
CathodeSensitivity Quantum Efficiency 0.48 % – – 0.29 % – –
Radiant 5 mA/W – – 3.5 mA/W – –
Anode Sensitivity Radiant 1000  A/W – – 700 A/W – –
Gain 2 x 105 1 x 106 – 2 x 105 1 x 106 –
Anode Dark Current – 4 nA 10 nA – 40 nA 100 nA
Anode Dark Counts – 1.6 x 104 s-1 – – 1.6 x 105 s-1 –
TimeResponse Anode Pulse Rise Time – 3 ns – – 3 ns –
Electron Transit Time – 23 ns – – 23 ns –
Transit Time Spread – 1.5 ns – – 1.5 ns

line

Near Infrared Microchannel Plate Photomultiplier Tube with Cooler NIR MCP-PMT

photonicsdpmt

Features:

  • High Speed
  • Rise Time: 170 ps (Typ.)
  • IRF (Instrument Response Function): ≤ 70 ps (FWHM) (Typ.)

Specifications:

  • General:
Spectral Response 950 to 1400 nm 950 to 1700 nm
Wavelength of Peak Response 1300 nm 1500 nm
Photocathode Material InP / InGaAsP InP / InGaAs
Window Material Borosilicate Glass
Effective Area of PMT Ø 2 mm
Stage of MCP 2 stages Filmed MCP
Operating Ambient Temperature -90 to -70 0C
Storage Temperature -90 to +50 0C
  • Maximum Rating:
PMT Supply Voltage -3400 V
Average PMT Anode Current 20 nA
  • Characteristics (at -3000 V, -80 0C)
    Min. Typ. Max. Min. Typ. Max.
    CathodeSensitivity Quantum Efficiency 0.1 % 1.0 % – 0.1 % 1.0 % –
    Radiant 1.0 mA/W 11 mA/W – 1.2 mA/W 12 mA/W –
    Gain 1 x 105 3 x 105 – 1 x 105 3 x 105 –
    Anode Dark Current – 2 x 104 s-1 1 x 105 s-1 – 5 x 104 s-1 2.5 x 105 s-1
    Voltage Driver Current – – 110 µA – – 110 µA
    TimeResponse Rise Time – 170 ps – – 170 ps –
    Fall Time – 700 ps – – 700 ps –
    IRF – 70 ps 100 ps – 70 ps 100 ps

pmt2

Specifications:

  • General:
Spectral Response 950 to 1400 nm 950 to 1700 nm
Wavelength of Peak Response 1300 nm 1500 nm
Photocathode Material InP / InGaAsP InP / InGaAs
Window Material Borosilicate Glass
Effective Area of PMT Ø 2 mm
Stage of MCP 2 stages Filmed MCP
Operating Ambient Temperature -90 to -70 0C
Storage Temperature -90 to +50 0C
  • Maximum Rating:
PMT Supply Voltage -3400 V
Average PMT Anode Current 20 nA
  • Characteristics (at -3000 V, -80 0C)
Parameter Min. Typ. Max. Min. Typ. Max.
CathodeSensitivity Quantum Efficiency 0.1 % 1.0 % – 0.1 % 1.0 % –
Radiant 1.0 mA/W 11 mA/W – 1.2 mA/W 12 mA/W –
Gain 1 x 105 3 x 105 – 1 x 105 3 x 105 –
Anode Dark Current – 2 x 104 s-1 1 x 105 s-1 – 5 x 104 s-1 2.5 x 105 s-1
Voltage Driver Current – – 110 µA – – 110 µA
TimeResponse Rise Time – 170 ps – – 170 ps –
Fall Time – 700 ps – – 700 ps –
IRF – 70 ps 100 ps – 70 ps 100 ps

 

  • Cooler:
Input Voltage AC 230 V, 50 Hz
Coolant Medium Liquid Nitrogen (LN2)
Temperature Controllable Range -70 to -90 0C (Continuously adjustable)
Cool-down Time About 2 h (-80 0C setting)
Liquid Nitrogen Consumption Approx. 0.5 L/h
Holder -HV Connector SHV-R
Signal Connector SMA-R
Load Resistor Open
Power Consumption 60 VA
Operating Ambient Temperature +10 to +40 0C
Weight Cooling Unit Approx. 6 Kg
Controller, etc. Approx. 11 Kg
System Configuration Cooling Unit, Controller, Control Cable, Silicon Tube, Insulated Transfer Hose, LN2 Transfer Head

line

Bench-top Type High Voltage Power Supply for PMT
bendpmt

Bench-top type multipurpose power supply incorporating a high voltage power supply (maximum output of -2000V for photomultiplier tube).

Specifications:

Type Bench top type
Input Voltage AC 100 to 240 V
Max. Output Voltage -2000 V
Max. Output Current 1.8 mA
Guaranteed Output Voltage Range -320 to -2000 (variable) V
Line Regulation ± 0.05 (for 10 % change in line voltage) %
Load Regulation ± 0.03 (For 0 % to 100 % change in load)%
Ripple/Noise 0.003 * (*Unit:%) mV
Temperature Coefficient ± 0.01 % / 0C
Operating Ambient Temperature 0 to +40 0C
Operating Ambient Humidity Below 85 %
Storage Temperature -20 to +50 0C
Storage Humidity Below 90 %
Power Consumption 60 VA
Dimensions 246 mm x 85 mm x 312 mm
Weight Approx. 3.0 Kg

line

Compact Side-on PMT
compactsidephotonics

Product Variation:

Spectral Response Features
185 nm to 750 nm High sensitivity in UV to Visible range
185 nm to 900 nm For general applications in UV to near IR range
185 nm to 900 nm High sensitivity in UV to near IR range
185 nm to 830 nm Low dark current in UV to near IR range
185 nm to 650 nm For general application in UV to visible range

line

Specifications:

Parameter
-01 -02 -03 -04 -05
Input Voltage +11.5 to +15.5 V
Max. Input voltage +18 V
Max. Input Current 7 mA
Max. Output Signal Current 10 µA
Max. Control Voltage +1.2 (Input impedance: 1Ω)
Recommended control voltage adjustment range +0.25 to +1.0 V
Effective Area 3.7 x 13.0 mm
Peak Sensitivity Wavelength 420 nm 400 nm 450 nm 530 nm 340 nm
Cathode Luminous Sensitivity Min. 80 µA/lm 200 µA/lm 350 µA/lm 140 µA/lm 20 µA/lm
Typ. 120 µA/lm 300 µA/lm 500 µA/lm 200 µA/lm 40 µA/lm
Blue Sensitivity Index Typ. 10 – – – 5
Red/White Ratio Typ. – 0.3 0.4 0.15 –
Radiant Sensitivity Typ. 90 mA/W 77 mA/W 105 mA/W 70 mA/W 48 mA/W
Anode Luminous Sensitivity Min. 100 A/lm 400 A/lm 1000 A/lm 300 A/lm 50 A/lm
Typ. 700 A/lm 1200 A/lm 2000 A/lm 700 A/lm 300 A/lm
Radiant Sensitivity Typ. 5.2 x 105 A/W 3.1 x 105 A/W 4.2 x 105 A/W 2.5 x 105 A/W 3.6 x 105 A/W
Dark Current Typ. 1 nA 1 nA 2 nA 0.1 nA 0.5 nA
Max. 10 nA 10 nA 10 nA 1 nA 5 nA
Rise Time Typ. 1.4 ns
Ripple Noise (Peak to peak) Max. 0.5 mV
Setting Time Max. 10 s
Operating Ambient Temperature +5 to +50 0C
Storage Temperature -20 to +50 0C
Weight 110 g
Anode Luminous Sensitivity Min. 100 A/lm 400 A/lm 1000 A/lm 300 A/lm 50 A/lm
Typ. 700 A/lm 1200 A/lm 2000 A/lm 700 A/lm 300 A/lm
Radiant Sensitivity Typ. 5.2 x 105 A/W 3.1 x 105 A/W 4.2 x 105 A/W 2.5 x 105 A/W 3.6 x 105 A/W
Dark Current Typ. 1 nA 1 nA 2 nA 0.1 nA 0.5 nA
Max. 10 nA 10 nA 10 nA 1 nA 5 nA
Rise Time Typ. 1.4 ns
Ripple Noise (Peak to peak) Max. 0.5 mV
Setting Time Max. 10 s
Operating Ambient Temperature +5 to +50 0C
Storage Temperature -20 to +50 0C
Weight 110 g

line

MCP (Microchannel Plate)
mcp1

Circular MCP:

MCP (Microchannel Plate) is a two-dimensional sensor that detects electrons, ions, vacuum UV rays, X-rays and gamma rays, and amplifies the detected signals.

Specifications:

Outer size Ø 38.4 mm Ø 86.7 mm Ø 113.9 mm
Electrode Area Ø 36.5 mm Ø 84.7 mm Ø 112 mm
Effective Area Ø 32 mm Ø 77 mm Ø 105 mm
Thickness 0.48 mm 1 mm 1 mm
Channel Diameter 12 µm 25 µm 25 µm
Channel Pitch 15 µm 31 µm 31 µm
Bias Angle θ 8 degrees 8 degrees 8 degrees
Open Area Ratio 60 % 60 % 60 %
Electrode Material Inconel Inconel Inconel
Gain (Min.) 104 104 104
Resistance 20 to 100 MΩ 10 to 100 MΩ 5 to 50 MΩ
Dark Current (Max.) 0.5 pA.cm2 0.5 pA.cm2 0.5 pA.cm2
Max. Linear Output 7 % o Strip Current 7 % o Strip Current 7 % o Strip Current
Supply Voltage 1.0 kV 1.0 kV 1.0 kV
Operating Ambient Temp. -50 to +70 0C -50 to +70 0C -50 to +70 0C

Rectangular MCP:

Specifications:

Outer size 15.9 x 9.4 mm 49.9 x 39.9 mm 59.9 x 59.9 mm 96.9 x 96.9 mm
Electrode Area 15 x 8.5 mm 49 x 39 mm 58 x 58 mm 95.6 x 77.3 mm
Effective Area 13 x 6.5 mm 45 x 35 mm 53 x 53 mm 90 x 72 mm
Thickness 0.48 mm 0.48 mm 0.80 mm 1.00 mm
Channel Diameter 12 µm 12 µm 20 µm 25 µm
Channel Pitch 15 µm 15 µm 25 µm 31 µm
Bias Angle θ 8 degrees 8 degrees 8 degrees 8 degrees
Open Area Ratio 60 % 60 % 60 % 60 %
Electrode Material Inconel Inconel Inconel Inconel
Gain (Min.) 104 104 104 104
Resistance 100 to 500 MΩ 20 to 200 MΩ 20 to 120 MΩ 10 to 50 MΩ
Dark Current (Max.) 0.5 pA.cm2 0.5 pA.cm2 0.5 pA.cm2 0.5 pA.cm2
Max. Linear Output 7 % o Strip Current 7 % o Strip Current 7 % o Strip Current 7 % o Strip Current
Supply Voltage 1.0 kV 1.0 kV 1.0 kV 1.0 kV
Operating Ambient Temp. -50 to +70 0C -50 to +70 0C -50 to +70 0C -50 to +70 0C

rectimg

line

Si Photo-diodes

Photodiodes
Si Photodiode

photonicsimg2

For High Power UV monitor, and UV to Visible, Precision Photometry
Features:

  • TO-18 package with UV glass window
  • High sensitivity from UV to near infrared range
  • High reliability versus high power UV radiation

Applications:

  • Mercury lamp (λ = 254 nm) monitor
  • Excimer laser (KrF: λ = 248 nm) monitor
  • Other UV detection

line

Si APD (Avalanche Photodiode)

 

photonicsn

Si APD is a low bias, high speed APD for 900 nm wavelength. Si APD is designed to provide a peak sensitivity wavelength in the 900 nm band where optical rangefinders are increasingly used.

Features
– Peak sensitivity wavelength: 840 nm (gain=100)
– Low bias operation: Breakdown voltage=200 V max.
– High-speed response: Cutoff frequency=650 MHz typ.

Specifications:

Type High-speed type (for 900 nm, Low bias operation)
Photosensitive area φ0.2 mm
Package Metal
Package Category TO-18
Peak sensitivity wavelength (typ.) 840 nm
Spectral response range (min.) 400 to 1150 nm
Photosensitivity (typ.) 0.52 A/W
Dark current (max.) 1 nA
Cutoff frequency (typ.) 650 MHz
Terminal capacitance (typ.) 0.5 pF
Breakdown voltage (typ.) 160 V
Temperature coefficient of breakdown voltage (typ.) 1.1 V/℃
Gain (typ.) 100

Specifications:

Window material UV glass UV glass
Package TO-18 TO-18
Active area size 1.1 x 1.1 mm 1.1 x 1.1 mm
Effective active area 1.2 mm2 1.2 mm2
Reverse Voltage VR Max. 5 V 5 V
Operating Temperature Topr -40 to +100 0C -40 to +100 0C
Storage Temperature Tstg -50 to  +125 0C -50 to +125 0C
Spectral Response Range λ 190 to 1000 nm 190 to 1100 nm
Peak Sensitivity Wavelength λp 720 nm 960 nm
Photosensitivity S λp 0.36 A/W 0.50 A/W
200 nm Min. 0.06 A/W 0.06 A/W
Typ. 0.075 A/W 0.075 A/W
Short circuit Current100 lx Isc Min. 0.5 µA 1.0 µA
Typ. 0.66 µA 1.2 µA
Dark Current ID VR=10 mV Max. 2 pA 20 pA
Temp. coefficient of TCID ID 1.12 times/ 0C 1.15 times/ 0C
Rise time tr VR= 0, RL=1kΩ 0.15 µs 0.1 µs
Terminal capacitance CtVR= 0, f= 10 kHz 35 pF 20 pF
Shunt resistance Rsh VR= 10mV Min. 5 GΩ Min. 0.5 GΩ
Typ. 50 GΩ Typ. 2 GΩ